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HGT1S3N60C3D Datasheet, Diodes, Fairchild Semiconductor

HGT1S3N60C3D Datasheet, Diodes, Fairchild Semiconductor

HGT1S3N60C3D

datasheet Download (Size : 327.17KB)

HGT1S3N60C3D Datasheet
HGT1S3N60C3D

datasheet Download (Size : 327.17KB)

HGT1S3N60C3D Datasheet

HGT1S3N60C3D Features and benefits

HGT1S3N60C3D Features and benefits


* 6A, 600V at TC = 25oC
* 600V Switching SOA Capability
* Typical Fall Time . . . . . . . . . . . . . . 130ns at TJ = 150oC
* Short Circuit Rating
* L.

HGT1S3N60C3D Application

HGT1S3N60C3D Application

operating at moderate frequencies where low conduction losses are essential. PACKAGING AVAILABILITY PART NUMBER HGTP3N60.

HGT1S3N60C3D Description

HGT1S3N60C3D Description

The HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss.

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TAGS

HGT1S3N60C3D
600V
UFS
Series
N-Channel
IGBT
with
Anti-Parallel
Hyperfast
Diodes
Fairchild Semiconductor

Manufacturer


Fairchild Semiconductor

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